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Technology Topics
Introducing the latest technologies being researched and developed at KIOXIA Corporation and various use cases of flash memories.
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As the number of multi-level increases from MLC, TLC and QLC, while the memory density can be increased, the number of reads increases and random access deteriorates. We reported on a new multi-level coding method that reduces the number of reads and enables high-speed random access while maintaining a high memory density by sharing data among multiple memory cells.
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We developed a recovery annealing technology applicable to 7-bit per cell flash memory operating at cryogenic temperatures. The technology can contribute to the realization of a sustainable society through future bit cost scaling and extended chip life.
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We successfully demonstrated the world’s first 7-bit per cell by combining 77K cryogenic operation with silicon process technology that can improve memory cell characteristics.
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With the growth of the quantum computing and high performance computing, there are increasing demands for the computer systems and electrical components that can operate at relatively low temperature. It has been reported that the characteristics of several types of semiconductor devices can be improved by cryogenic temperature. This report is the first to introduce a cryogenic operation and characteristics of 3D Flash memory at 77 K immerged in the liquid nitrogen.
R&D Organization
We aim to pursue continuous technological exploration and its social implementation to achieve an affluent and sustainable digitalized society through innovative memory technologies.
Conducts R&D on BiCS FLASH™, a type of 3D flash memory that KIOXIA was the first to develop in the world, while serving as a bridge between R&D and volume production.