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Technology Topics
Introducing the latest technologies being researched and developed at KIOXIA Corporation and various use cases of flash memories.
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As the demand for larger memory capacities has rapidly increased, a high etch rate for a high aspect ratio structure is significantly required for high productivity. We have modeled ion-induce surface reactions and developed a simulation technique for predicting the optimal ion species for the etching process of the memory hole because ion species play a dominant role in high aspect ratio etching.
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Memory devices that require new materials and complex 3D structures.
R&D Organization
We aim to pursue continuous technological exploration and its social implementation to achieve an affluent and sustainable digitalized society through innovative memory technologies.
Conducts R&D on BiCS FLASH™, a type of 3D flash memory that KIOXIA was the first to develop in the world, while serving as a bridge between R&D and volume production.